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SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
* * * Small Package Low on Resistance : Ron = 120 m (max) (@VGS = 4 V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating 30 10 3.2 6.4 1250 150 -55~150 A Unit V V
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
mW C C
JEDEC
Note:
JEITA Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2
Note 1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
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2007-11-01
SSM3K01T
Marking
3
Equivalent Circuit
3
KW
1
2
1
2
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 1.6 A ID = 1.6 A, VGS = 4 V ID = 1.3 A, VGS = 2.5 V (Note3) (Note3) (Note3) Min 30 0.6 2.6 Typ. 5.2 85 115 152 41 102 45 69 Max 1 1 1.1 120 150 Unit A V A V S m m pF pF pF nS
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 15 V, ID = 0.5 A VGS = 0~2.5 V, RG = 4.7
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
10 s 2.5 V 0 ID IN RG RL OUT VDD = 15 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25C
(b) VIN
VGS
2.5 V 10%
90%
0
(c) VOUT
VDS
VDD
10% 90% tr ton toff tf
VDD
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device.
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SSM3K01T
ID - VDS
4 10 3.5 3 2.5 2 1.5 1.7 V 1 0.5 0 0 VGS = 1.5 V 4.0 2.5 2.1 10000 Common Source Ta = 25C 1000 Common Source VDS = 3 V 100C
ID - VGS
Drain current ID (mA)
Drain current ID (A)
100
Ta = 25C
1.9 V
10
-25C
1
0.1
0.5
1
1.5
2
0.01 0
0.5
1
1.5
2
2.5
3
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
200 Common Source Ta = 25C 160 200 250 Common Source
RDS (ON) - Ta
Drain-Source on resistance RDS (ON) (m)
120
VGS = 2.5 V
Drain-Source on resistance RDS (ON) (m)
150
VGS = 2.5 V, ID = 1.3 A
VGS = 4 V 80
100 VGS = 4 V, ID = 1.6 A 50
40
0 0
1
2
3
4
5
0 -50
-25
0
25
50
75
100
125
150
Drain current ID (A)
Ambient temperature Ta (C)
|Yfs| - ID
10 1000 Common Source Ta = 25C
C - VDS
Common Source VGS = 0 f = 1 MHz Ta = 25C
Forward transfer admittance |Yfs| (S)
Capacitance C
(pF)
VDS = 3 V
1
100
Ciss
Coss
Crss 0.1 0.01 10 0.1
0.1
1
10
1
10
100
Drain current ID (A)
Drain-Source voltage
VDS (V)
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2007-11-01
SSM3K01T
t - ID
1000 Common Source VDD = 15 V VGS = 0~2.5 V RG = 4.7 Ta = 25C 1.5 t = 10 s
PD - Ta
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
Drain power dissipation PD (W)
1.25
Switching time t (ns)
1
100
toff
0.75
DC
0.5
tf ton
0.25
tr 10 0.01 0.1 1
0 0
25
50
75
100
125
150
Ambient temperature Ta (C)
Drain current ID (A)
Safe operating area
10 ID max (pulsed) ID max (continuous) 1 ms*
10 ms*
Drain current ID (A)
1 DC operation Ta = 25C 10 s*
0.1
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 10
VDSS max 100
0.01 0.1
Drain-source voltage
VDS (V)
rth - tw
1000
Transient thermal impedance rth (C /W)
100
10 Single pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
4
2007-11-01
SSM3K01T
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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